FDS4435BZ Datasheet, MOSFET, ON Semiconductor

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FDS4435BZ Features and benefits

* Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.8 A
* Max RDS(on) = 35 mW at VGS = −4.5 V, ID = −6.7 A
* Extended VGSS Range (−25 V) for Battery Applications

FDS4435BZ Application

common in Notebook Computers and Portable Battery Packs. Features
* Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.8 A .

FDS4435BZ Description

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Co.

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