FDS4435BZ Datasheet | onsemi

Description This P- Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Features - Max RDS(on) = 20 m W at VGS = - 10 V, ID = - 8.8 A - Max RDS(on) = 35 m W at VGS = - 4.5 V, ID = - 6.7 A - Extended VGSS Range (- 25 V) for Battery Applications - HBM ESD Protection Level of ±3.8 k V Typical (Note 3) - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - This Device is Pb- Free and Ro HS pliant Specifications MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current - Continuous TA = 25°C (Note 1a) - Pulsed - 30 ±25 - 8.8 - 50 Power Dissipation TA = 25°C (Note 1a) Power Dissipation TA = 25°C (Note...